Sponsored by Asylum Research - An Oxford Instruments CompanyJan 24 2024Reviewed by Maria Osipova The sustained reduction in the size of transistor devices is due, in part, to the replacement of silicon oxide with hafnium oxide as the gate oxide in MOSFETS in the mid-2000s.1
In 2011, a technique for producing ferroelectric hafnium oxide thin films was described.3 All bulk phases of hafnium oxide possess centrosymmetric crystal structures and, as a result, do not show ferroelectricity. Ferroelectric transistors hold potential as low-power, ultrafast, and non-volatile memory systems, possibly becoming a competitor to current flash technology.5-7
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