A team of Chinese researchers has developed a new kind of ferroelectric material that could lead to near-infinite memory chips.
The discovery could dramatically reduce the cost of data centers, and also have important applications in deep-sea exploration and aerospace.Chinese researchers have developed a new material that could yield near-infinite lifespan memory storage chips. Made using a new type of ferroelectric material, this discovery could open the door to reducing the cost of data centers, deep-sea exploration, and the aerospace industry.
Ferroelectric materials are great for creating storage chips due to their low power consumption, lossless reading, and fast writing capabilities.To this end, ferroelectric materials are currently utilized in storage technology, sensors, and energy-harvesting devices. However, they also have the potential to be used in the construction of storage servers or to support large data centers in the future.potentially impact the ongoing rivalry between the US and China in the field of AI technologies.
“It’s like waves gathering small stones in the sea, gradually forming a large reef that blocks the flow of the waves,” he added. The problem was found to be solvable by constructing ferroelectric materials in layers. The team developed a nanometer-thick two-dimensional layered material known as 3R-MoS2. A nanometer is approximately 100,000 times smaller than a human hair’s diameter.“Laboratory tests showed that 3R-MoS2 exhibited zero performance degradation after millions of cycles, suggesting that storage devices made from this new two-dimensional sliding ferroelectric material have no read/write limitations,” the CAS report said.
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