Aluminum scandium nitride thin films could pave the way for the next generation of ferroelectric memory devices, according to a new study.
Compared to existing ferroelectric materials, these films maintain their ferroelectric properties and crystal structure even after heat treatment at temperatures up to 600 C in both hydrogen and argon atmospheres. This high stability makes them ideal for high-temperature manufacturing processes under the H2-included atmosphere used in fabricating advanced memory devices.
, degrade and lose their polarization when exposed to heat treatment with hydrogen during fabrication., a research team led by Assistant Professor Kazuki Okamoto and Hiroshi Funakubo at Tokyo Institute of Technology , in collaboration with Canon ANELVA Corporation and Japan Synchrotron Radiation Research Institute , has shown that aluminum scandium nitride ferroelectric films remain stable and maintain their ferroelectric properties at temperatures up to 600°C.
. This technique involves applying positive and negative electric fields to the film and observing the resulting polarization response.remained stable above 120 µC/cm², regardless of the electrode or treatment atmosphere, a value five times larger than HfOincreased only slightly by about 9%. This increase was attributed to changes in the film's crystal lattice constant not due to the presence of hydrogen or the choice of electrode used.
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